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Device and method for forming I-III-VI¶2¶ thin film layers

机译：形成I-III-VI¶2¶薄膜层的装置和方法

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摘要

An apparatus for forming I-III-VI2 thin-film layers has a reaction chamber made of a carbon material in which a precursor for forming a I-III-VI2 thin-film layer and a vapor source of an element of group VI of the periodic table are placed. The precursor and vapor source are heated under vacuum to form the I-III-VI2 thin-film layer. The reaction chamber is divided into a reaction compartment A having the precursor placed therein and a reaction compartment B having the vapor element of group IV placed therein. A communication channel C is provided between the reaction compartments A and B, and a heating unit controlled by a temperature control unit is provided exterior to each of the reaction compartments A and B.

机译：用于形成I-III-VI2薄膜层的设备具有由碳材料制成的反应室，其中用于形成I-III-VI2薄膜层的前体和碳的VI族元素的蒸气源。周期表被放置。前体和蒸气源在真空下加热以形成I-III-VI2薄膜层。将反应室分成其中放置有前体的反应室A和其中放置有第IV族的蒸气元素的反应室B。在反应室A和B之间设置有连通通道C，并且在每个反应室A和B的外部设置有由温度控制单元控制的加热单元。

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公开/公告号DE19717565C2

专利类型
公开/公告日2001-02-22

原文格式PDF
申请/专利权人 YAZAKI CORP. TOKIO/TOKYO JP;
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申请/专利号DE19971017565
发明设计人 NAKAGAWA SHINNICHI SUSONO SHIZUOKA JP;SATO KENJI SUSONO SHIZUOKA JP;NAKAMURA MASAMI SUSONO SHIZUOKA JP;TOYODA KAZUHIRO SUSONO SHIZUOKA JP;KAMIYA TAKESHI SUSONO SHIZUOKA JP;SUZUKI KAZUE SUSONO SHIZUOKA JP;ISHIHARA HIROKI SUSONO SHIZUOKA JP;IKEYA TAKESHI SUSONO SHIZUOKA JP;ISHIDA MASAHARU SUSONO SHIZUOKA JP;
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申请日1997-04-25
分类号H01L21/36;C30B25/06;C30B25/02;C23C14/24;H01L31/18;
国家 DE
入库时间 2022-08-22 01:10:38

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