K7N801845M-HC10
vs
IDT71V67903S85BGG
feature comparison
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
SAMSUNG SEMICONDUCTOR INC
|
INTEGRATED DEVICE TECHNOLOGY INC
|
| Part Package Code |
BGA
|
BGA
|
| Package Description |
BGA,
|
BGA,
|
| Pin Count |
119
|
119
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
3A991.B.2.A
|
3A991.B.2.A
|
| HTS Code |
8542.32.00.41
|
8542.32.00.41
|
| Access Time-Max |
5 ns
|
8.5 ns
|
| JESD-30 Code |
R-PBGA-B119
|
R-PBGA-B119
|
| Length |
22 mm
|
22 mm
|
| Memory Density |
9437184 bit
|
9437184 bit
|
| Memory IC Type |
ZBT SRAM
|
CACHE SRAM
|
| Memory Width |
18
|
18
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
119
|
119
|
| Number of Words |
524288 words
|
524288 words
|
| Number of Words Code |
512000
|
512000
|
| Operating Mode |
SYNCHRONOUS
|
SYNCHRONOUS
|
| Operating Temperature-Max |
70 °C
|
70 °C
|
| Operating Temperature-Min |
|
|
| Organization |
512KX18
|
512KX18
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
BGA
|
BGA
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
GRID ARRAY
|
GRID ARRAY
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Seated Height-Max |
2.4 mm
|
2.36 mm
|
| Supply Voltage-Max (Vsup) |
2.625 V
|
3.465 V
|
| Supply Voltage-Min (Vsup) |
2.375 V
|
3.135 V
|
| Supply Voltage-Nom (Vsup) |
2.5 V
|
3.3 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
COMMERCIAL
|
COMMERCIAL
|
| Terminal Form |
BALL
|
BALL
|
| Terminal Pitch |
1.27 mm
|
1.27 mm
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Width |
14 mm
|
14 mm
|
| Base Number Matches |
1
|
1
|
| Pbfree Code |
|
Yes
|
| Rohs Code |
|
Yes
|
| Additional Feature |
|
FLOW-THROUGH ARCHITECTURE
|
| JESD-609 Code |
|
e1
|
| Moisture Sensitivity Level |
|
3
|
| Terminal Finish |
|
TIN SILVER COPPER
|
|
|
|
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