First-principles band alignment engineering in polar and nonpolar orientations for wurtzite AlN, GaN, and BxAl1-xN alloys
Milne, Biswas, and Singh (2024)C. L. Milne, T. Biswas, and A. K. Singh, Electronic properties of ultra‐wide bandgap BxAl1-xN computed from first-principles simulations, A... T. Detchprohm, X. Zhang, R. D. Dupuis, and X. Li, Nearly-zero valence band and large conduction band offset at BAlN/GaN heterointerface for optical and power device appl...